화학공학소재연구정보센터
Electrochemical and Solid State Letters, Vol.3, No.3, 150-152, 2000
Defect depth profile in CdTe : Cl by positron annihilation
Depth resolved defect profiles have been obtained from CdTe:Cl samples using both positron lifetime spectroscopy and Doppler-broadening of annihilation radiation spectra. The dominant defect species was identified as the chlorine- vacancy complex or A center The defect concentration in the bulk was found to be 2.5 x 10(16) cm(-3), with a much higher near-surface concentration, in agreement with chlorine concentration profiles obtained using the radiotracer sectioning technique. It is proposed that the Cd vacancy is involved in the diffusion of CI atom.