Electrochemical and Solid State Letters, Vol.3, No.3, 147-149, 2000
Influence of BF2-implantation on the roughness of cobalt silicide/silicon interfaces
Thin CoSi2 layers were prepared with different methods and implanted with BF2. The root mean square roughness and the maximum roughness of the silicide/silicon interface are measured before and after implanting through the layer slack by an atomic force microscope after etching of the CoSi2. The results show the relevance of the implantation on the silicide/silicon interface.