Polycrystalline zirconium tin titanate (Zr0.8Sn0.2TiO4, ZST) thin films with thickness of 81 nm were deposited successfully along the (100) on a p-type Si substrate by an improved sol-gel method. The deposited films were crystallized when annealing temperature was up to 450 degrees C. The thickness and compositions of the interface layer between the ZST films and Si substrate were identified by high-resolution transmission electron microscope (HRTEM). The electrical properties such as leakage current density, flat-band voltage and capacitance of the films were measured and discussed. Furthermore, the mechanism of the leakage current was also investigated. (c) 2006 Elsevier B.V. All rights reserved.