Chemical and electronic structures of Lu2O3/Si interfacial transition layer

Nohira H; Shiraishi T; Nakamura T; Takahashi K; Takeda M; Ohmi S; Iwai H; Hattori T

Applied Surface Science, Vol.216, No.1-4, 234-238, 2003

DOI10.1016/S0169-4332(03)00425-2 Export Citation

Chemical and electronic structures of Lu2O3/Si interfacial transition layer

Nohira H, Shiraishi T, Nakamura T, Takahashi K, Takeda M, Ohmi S, Iwai H, Hattori T

The composition of transition layer (TL) formed between Lu2O3 and Si(1 0 0) substrate was determined non-destructively by applying newly developed depth profiling method to the angle-resolved Si 2p and Lu 4d photoelectron spectra. The conduction and valence band alignments of Lu2O3 with respect to Si(1 0 0) were also determined from the measurement of 0 Is photoelectron spectra and valence band spectra. (C) 2003 Elsevier Science B.V. All rights reserved.

Keywords:high-K;Lu2O3;transition layer;silicate;depth profiling;XPS