Oxygen radical treatment applied to ferroelectric thin films

Takahashi I; Sakurai H; Yamada A; Funaiwa K; Hirai K; Urabe S; Goto T; Hirayama M; Teramoto A; Sugawa S; Ohmi T

Applied Surface Science, Vol.216, No.1-4, 239-245, 2003

DOI10.1016/S0169-4332(03)00424-0 Export Citation

Oxygen radical treatment applied to ferroelectric thin films

Takahashi I, Sakurai H, Yamada A, Funaiwa K, Hirai K, Urabe S, Goto T, Hirayama M, Teramoto A, Sugawa S, Ohmi T

A low dielectric constant ferroelectric Sr-2(Ta1-x,Nb-x)(2)O-7 (STN) film formation technology which is applied to floating gate type ferroelectric random access memory (FFRAM) has been developed. The high ferroelectric performance of the STN capacitor has been achieved by plasma PVD and an oxygen radical treatment using microwave-excited (2.45 GHz) high-density (>10(12) cm(-3)) low electron temperature (<1 eV) Kr/O-2 plasma. Oxygen radical treatment can effectively oxidize ferroelectric film at 400 degreesC. (C) 2003 Elsevier Science B.V. All rights reserved.

Keywords:Sr-2(Ta1-x,Nb-x)(2)O-7 (STN);oxygen radical treatment;low temperature treatment;oxidizing ferroelectric effectively;Kr/O-2 plasma