A CoSi2/TiN bilayer was coated on Si emitter tips and the emission characteristics of the tips were investigated. The CoSi2 layer was grown in situ by a reactive chemical vapor deposition of cyclopentadienyl dicarbonyl cobalt at 650 degreesC and then the TiN was deposited on the CoSi2 layer at 550 degreesC by a reactive sputtering of Ti with gas a reactive gas. The CoSi2 layer was conformally coated on the Si tips and the TiN layer adhered well to the CoSi2 layer. The CoSi2/MN-coated emitters showed a low turn-on voltage due to the low work function by TiN and a steep current increase caused by CoSi2. The current fluctuation of the CoSi2/TiN-coated Si emitter was smaller than that of the TiN-coated emitter. The long-term emission stability of the CoSi2/TiN-coated Si emitter was also greatly improved compared to the CoSi2-coated emitter because of the superior high temperature stability of the TiN layer. (C) 2002 Elsevier Science B.V. All rights reserved.