The effect of growth interuption times combined with selective group-V species exposure (SSE) of InGaAs/AlAsSb short-period superlattice (SL) structure grown by molecular beam epitaxy (MBE) on InP (100) substrate was investigated with X-ray diffraction (XRD) and Raman scattering. XRD and Raman scattering results show that, although the average lattice mismatch relative to InP is close to zero, there is an interface broadening dependence on the growth procedure. Larger Sb-As intermixing at the interface is observed by increasing the access of Sb atoms to the InGaAs interface, indicating the need of special growth procedures in order to obtain compositionally abrupt interfaces in this heterostucture.