Journal of Crystal Growth, Vol.303, No.1, 297-301, 2007
Dynamics of 1 1 1 Ge facet and dopant distribution at laminar melt flow crystal growth
An antimony-doped germanium single crystals were grown by the axial heat processing (AHP) method for experimental-numerical research of faceting of melt/crystal interface. The comparing of experimental and numerical results has shown the high accuracy of determination of heat and mass transfer during faceted Ge AHP crystal growth at using of the novel model of facet growth. The conditions were found to conduct an experiment on influence of melt flow direction on facet Ge morphological instability. (c) 2007 Elsevier B.V. All rights reserved.
Keywords:computer simulation;convection;crystal morphology;growth from melt;semiconducting germanium