An optoelectronic integrated circuit (OEIC) structure consisting of high electron mobility transistors (HEMT) and a metal semiconductor metal photo detector (MSM-PD) was achieved by gas source molecular beam epitaxy with one growth run. The whole structure consists of an InGaAs/InAlAs MSM PD and InGaAs/InAlAs HEMT preamplifier circuits, An etch stop layer, InP, was inserted between the MSM and HEMT structure, which makes the device process much easier because of the good etch selectivity between InP and InAlAs. The MSM photo-detector, with an active area of 80 x 80 mum(2), has the responsivity of 0.62 A/W, The DC transconductance of an InGaAs/InAlAs HEMT with 1 m gate length is 305 mS/mm with threshold voltage of -1.4 V. High frequency measurements show that the -3 dB bandwidth of the OEIC receiver is 1.0 GHz indicating that it can operate at a transmitting rate of 1.3 Gb/s.