Tertiarybutylarsine and -phosphine are used in a gas source molecular beam epitaxy system as alternative sources for the highly toxic hydrides arsine (AsH3) and phosphine (PH3). The growth parameters for binary and ternary (Al, Ga, In) (As, P) compounds on InP substrates were investigated. Heterostructures with good morphologies and optical properties M ere realized. AlGaInAs/GaInAs/InP long wavelength separate confinement heterostructure lasers with four compressively strained quantum wells were grown. They exhibit a transparency current density of 700 A/cm(2) and a threshold current density of 1.0 kA/cm(2) for 1 mm long broad area devices, respectively.