We have developed a new horizontal MOCVD reactor (SR6000) for the multiple wafer growth of III-nitride film. This system is capable of handling 2 " x 6 wafers per growth. To evaluate this system we have grown nondoped GaN films and Si-doped GaN films. As a result, we have obtained the high-quality GaN films, high uniformity of thickness and doping profile. Layer thickness distribution of both GaN films was better than +/- 2% and the distribution of sheet resistance of Si-doped GaN film was also better than +/- 2% across a full 2 " wafer. In addition, we have also grown InGaN/GaN multi-quantum-well (MQW) structure and AlGaN films by using this system. As a result of room-temperature PL measurement of InGaN/GaN MQW structure, high-intensity of 450 nm emission with 28 nm full-width at half-maximum (FWHM) was obtained. As far as AlGaN is concerned, it was found that a high aluminum content and aluminum content uniformity of AlGaN films were obtained by growing at low pressure.