Self-organized formation of GaSb quantum dots during MOCVD growth has been studied. Thin GaSb lavers are deposited on GaAs (001), followed by a growth interruption before the deposition of a GaAs layer. The GaSb growth is performed using low V/III ratios and growth temperatures between 510 degreesC and 550 degreesC. Undercritical GaSb depositions lead to inhomogenities in the composition and thickness of such layers. Photoluminescence measurements suggest these quantum islands to provide zero-dimensional confinement for holes. The dependence of the luminescence on the growth temperatures indicates the formation of the quantum islands to be kinetically controlled.