The Hall measurements were performed on Sb-doped ZnSe grown by metalorganic vapor-phase epitaxy. The hole concentration of 10(16) cm, which is independent of the growth temperature, was obtained. The mobility of the ZnSe grown at 525 degrees C is 27 cm(2)/Vs. The activation energy of acceptor in Sb-doped ZnSe is 600 meV, which is thought to be due to the Sb deep level.