Nitrogen (N) acceptor doping in ZnSe has been difficult with metalorganic vapor-phase epitaxy or metalorganic molecular-beam epitaxy (MOMBE) due to the neutralization effect by the N-hydrogen bonding. Doping of nano-clusters of p-type GaAs in ZnSe is proposed for realizing p-type ZnSe. A initial growth process of GaAs on ZnSe surfaces was studied to realize the doping of GaAs nano-clusters. A net acceptor concentration of 1 x 10(17) cm(-3) was observed by this method with MOMBE.