Hydrogen bonding effects on surface structure, photophysical properties, and photoelectrochernistry have been examined in a mixed film of porphyrin and fullerene composites with and without hydrogen bonding on indium tin oxide and nanostructured SnO2 electrodes. The nanostructured SnO2 electrodes modified with the mixed films of porphyrin and fullerene composites with hydrogen bonding exhibited efficient photocurrent generation compared to the reference systems without hydrogen bonding. Atomic force microscopy, infrared reflection absorption, and ultraviolet-visible absorption spectroscopies and time-resolved fluorescence lifetime and transient absorption spectroscopic measurements disclosed the relationship between the surface structure and photophysical and photoelectrochernical properties relating to the formation of hydrogen bonding between the porphyrins and/or the C-60 moieties in the films on the electrode surface. These results show that hydrogen bonding is a highly promising methodology for the fabrication of donor and acceptor composites on nanostructured semiconducting electrodes, which exhibit high photoelectrochernical properties.