The article deals with challenges of pattern transfer for ultra-low-k organosilicate glass (OSG) Aurora(TM) ULK. Etching was performed in a dipole ring magnet (DRM) etcher. By performing a design of experiments in CF4/Ar/O-2 plasma, we found the range of process variables for obtaining straight profile and maximal selectivity of Aurora(TM) ULK to SiC barrier layer. Besides these, other important process characteristics such as etch nonuniformity, reactive ion etching lag, microtrenching, etch critical dimension (CD) bias and others have been studied in detail for implementing a production-worthy etching recipe for 180-nm trenches. Photoresist stripping (PRS) on top of Aurora(TM) ULK without a hard mask presented another difficult problem which was solved by the development of a two-step stripping process performed consecutively in two different chambers. In addition, the issue of final iso/dense bias was solved by adjusting the lithography exposure recipe. (C) 2004 Elsevier B.V. All rights reserved.