During the implementation of Copper (Cu) dual damascene process, Cu contamination in the process of Cu sputtering, Cu electroplating and Cu CMP has been greatly concerned. Among this Cu contamination, one by Cu CMP process and/or Cu electroplating solution into interlayer dielectrics could be one of the compelling issues to fabricate Cu integration successfully. Especially, when it comes to low-k dielectrics, it is said that the contamination or the permeability of Cu caused by them into these low-k dielectrics could increase because of their porous nature. In this paper, we investigated and revealed the relationship between the contamination of Cu into various dielectrics and their properties. From our results, the following issues were concluded: (a) CVD SiOC low-k material, organic polymer ultra low-k material and porous MSQ ultra low-k material could have higher Cu contamination than conventional p-TEOS, more than 1 x 10(13) (atoMS/cm(2)), by Cu electroplating solution, (b) CVD SiOC low-k material could be the most sensitive to Cu contamination by Cu CMP process, more than 1 x 10(15) (atoms/cm(2)), in spite of its highly rigid structure and low porosity. (C) 2004 Elsevier B.V. All rights reserved.