Reactive ion etching (RIE) and inductively coupled plasma (ICP) Cr etch processes have been evaluated for fabrication of extreme ultraviolet lithography masks on 200 mm substrates. Experiments were completed to optimize the Cr etch rate, etch rate uniformity, and Cr to resist selectivity for both etch processes. The best ICP process was found to have superior etch rate, etch rate uniformity, and comparable Cr to resist selectivity to the RIE process. The effect of exposed Cr area on the Cr to resist selectivity, critical dimension (CD) bias, and CD bias 3sigma was also investigated. A decrease in exposed Cr area from 95% to 7% was found to dramatically increase tile Cr etch rate, leading to an increase in the Cr to resist selectivity. Lower Cr loading was also found to decrease the CD bias and CD bias 3sigma. The average CD bias was very hi-fi for both processes, with the ICP etch process having a higher CD bias (143 nm) than the RIE process (89 nm). The CD bias uniformity was significantly lower for the ICP process (32 nm, 3sigma) when compared to tile RIE process (71 nm, 3sigma).