Dry etch behavior of Fe in inductively coupled chlorine-based plasma at elevated temperatures has been investigated. Etch rates up to 300 nm/min at 190 degreesC were achieved, with good selectivity towards SiO2 and Al2O3 masks, Etching did not take place in pure Cl-2 plasma or Ar/Cl-2 plasma, but required the addition of a few percent BCl3 or SiCl4. The process was found to be a combination of spontaneous and ion enhanced chemical etching. Simultaneous exposure to ultraviolet light from an external source did not enhance the etch rate, but did shorten the inhibition time of the etching.