Reliability of dielectric films such as silicon dioxide in the metal-oxide semiconductor gate insulator has become a key issue as devices shrink in size. Many of the problems associated with reduction in both the width and thickness of the gate oxide can be controlled with the addition of nitrogen. Nitrogen incorporation into the oxide has been shown to have significantly better charge trapping properties, less interface state generation, and more resistance to continued oxidation and incorporation of impurities. The nitrogen also acts as a barrier to diffusion of dopants from the silicon substrate. The amount of nitrogen present and its location in the oxide control the extent to which each of these properties is exhibited. The concentration and distribution of nitrogen in Sate oxides was studied using secondary ion mass spectrometry (SIMS) and x-ray photoelectron spectroscopy (XPS). The SIMS analysis used Cs ion bombardment and detection of the CsN+ cluster to reduce the matrix effects associated with profiling from silicon oxide into silicon. A procedure was developed for XPS to provide the necessary signal to noise required for these low nitrogen concentrations. In addition to comparing the concentrations and spatial resolution of the nitrogen in the gate oxide, repeatability studies were also performed for each technique.