화학공학소재연구정보센터
Thin Solid Films, Vol.386, No.2, 281-285, 2001
Properties of V2O5 thin films deposited by means of plasma MOCVD
The deposition of V2O5 thin film, which is the candidate of the electrochromic material, by the microwave plasma MOCVD with bis-acetylacetonatovanadyl as a vanadium precursor on the indium tin oxide (ITO) thin film coated fused silica substrate in the similar method with trisacetylacetonatoindium and dipivaloylmethanatotin as indium and tin precursors. The deposit on the ITO film coated fused silica substrate was identified as slightly oxygen deficient V2O5 by means of X-ray diffraction and X-ray photoelectron spectroscopy. The transmittance and the absorption edge were 70% and 400 nm, respectively. The cyclic voltammogram measured in a 1 M LiClO4/gamma -butyrolactone electrolyte, a voltammogram due to the reduction of vanadium atom was identified and the variation of color of the film was observed. The deposit was suitable for the electrochromic material.