Thin Solid Films, Vol.383, No.1-2, 61-64, 2001
The characterization of silicon nitride films by contactless transient photoconductivity measurements
It is shown by non-invasive photoconductivity measurements that the coating of Si wafers by silicon nitride films leads to the increase of number of excess charge carriers generated in the silicon substrate by visible light due to the antireflection properties of the films. The silicon surface is electrically passivated by the deposition of these films on top of it.