In high performance polysilicon thin film transistors (TFTs) the uniformity of electrical characteristics remain a major problem. This situation has stimulated a growing activity aiming to control the lateral growth phenomenon. However, most of the techniques require additional processing steps or a rather high shot density. We present a technique based on a two-pass excimer laser crystallization process: during the first irradiation the sample is irradiated through a patterned mask, while the second irradiation, performed without the mask, results in the homogeneous crystallization of the sample. This technique allows the possibility of forming uniform polysilicon layers, with large (similar to 2 micron) and aligned grains, with a reduced number of shots and a relatively large process energy window. The results of crystallization performed at different laser energy densities, sample thickness and laser pulse duration are analyzed.