Differential absorption measurement of valence band splittings in 4H SiC

Sridhara SG; Bai S; Shigiltchoff O; Devaty RP; Choyke WJ

Materials Science Forum, Vol.338-3, 567-570, 2000

Sridhara SG, Bai S, Shigiltchoff O, Devaty RP, Choyke WJ

New differential absorption spectra showing the spin-orbit (SO) and crystal field (CF) splittings of the valence band in 4H SiC are presented here. The values of the two splittings are measured to be 6.8+/-0.6meV for SO and about 60meV for CF splitting.

Keywords:absorption;band structure;crystal field splitting;spin-orbit splitting;valence bands