Optically detected cyclotron resonance (ODCR) at X-band frequency (similar to9.23 GHz) was used to study electron and hole effective masses in 4H SiC. In addition to the known ODCR signal related to the cyclotron resonance (CR) of electrons we have observed in 4H SiC epitaxial layers grown by chemical vapor deposition (CVD) a new ODCR peak at higher magnetic field, which is attributed to the CR of the holes. The angular dependence of the hole CR peak can be described by the usual cyclotron mass relation for the case of an elliptical energy surface, with the values of the transverse mass m(perpendicular to)=(0.66+/-0.02) m(0) and the longitudinal mass m(parallel to)=(1.75+/-0.02) m(0). The principal axis of the ellipsoid is parallel to the c axis.