Surface studies of the wet and dry thermally oxidize SiO2/SiC interface using Atomic Force Microscopy (AFM) shows the formation of nano-islands at the interface. These nano-islands are resistant to HF acid etch and have been previously linked to residual carbon [1]. From X-ray Photoelectron Spectroscopy (XPS) results, a slight shift in binding energy was observed between the wet and dry process. The high frequency capacitance-voltage measurements display the presence of deep interface traps on both wet and dry thermal oxides and a net effective oxide charge, Q(eff) of approximately 7 x 10(11)cm(-2) on the wet thermal oxide and approximately 1.3 x 10(12) cm(-2) for the dry thermal oxide.