XPS analysis of the SiO2/SiC interface annealed in NO has been presented in the paper. Nitrogen accumulation of 1.6 at.% close to the SiO2/SiC interface was observed in the NO annealed sample. The N Is XPS spectrum indicates the formation of-Si drop N bonds at a binding energy of 397.8eV at the SiO2/SiC interface. The XPS spectrum of the NO annealed sample was compared with that of the Ar annealed sample. The Si 2p spectra demonstrate a clear difference between NO and Ar annealed SiO2/SiC MOS capacitors at the interface. The spectrum of the Ar annealed sample is much broader than that of the NO annealed sample, showing quite different chemical structures between Ar annealed and NO annealed SiO2/SiC interface. It is obvious that the NO annealed SiO2/SiC interface is less complex than the Ar annealed SiO2/SiC interface, indicating less interface defects in NO annealed SiO2/SiC interface.