Copper indium disulphide CuInS2 thin films were prepared by spray pyrolysis technique. Improvement of CuInS2 films stoichiometry was found by increasing the sulphur content in the sprayed solution. X-ray diffraction, transmission and electrical resistivity results are discussed as a function of the film composition. The films were single-phase and showed a preferred orientation (112), with chalcopyrite characteristic peak (103) for high sulphur content. P-type CuInS2 with a conductivity value in the range 10(-1)-10(-3) Omega(-1) cm(-1) and a gap energy of about 1.4 eV were obtained.