Amorphous Al2O3 films were grown on Si(100) and Si(111) substrates by low-pressure chemical vapor deposition in the temperature range of 250-600 degrees C using dimethylaluminum isopropoxide. dimethylaluminum tert-butoxide, and diethylaluminum isopropoxide as single sources. All these sources vaporize readily at room temperature under reduced pressure. The films were characterized by X-ray diffractometry, X-ray photoelectron spectroscopy, Anger electron spectroscopy and scanning electron microscopy. Auger depth profiling analysis of the samples indicates no appreciable carbon incorporation in the films.