Thin Solid Films, Vol.289, No.1-2, 29-33, 1996
Controlling Factors on the Synthesis of Pb(Zrxti1-X)O-3 Films
Perovskite-type lead zirconate titanate (Pb(Zr,Ti)O-3) films have been formed on SrTiO3(100) substrates using ArF excimer laser ablation as a function of substrate temperature and oxygen (O-2 + 8%O-3) pressure. They are formed at the substrate temperature of 450 similar to 530 degrees C and oxygen pressure of 10 similar to 70 mTorr. In addition, PbO films are obtained under similar formation conditions to those of the Pb(Zr,Ti)O-3 perovskite phases. This result suggests that PbO formation plays an important role in the construction of the Pb(Zr,Ti)O-3 perovskite structure. The crystal of Pb(Zr0.7Ti0.3)O-3 film is expanded along the c axis, caused by the interaction with the SrTiO3 substrate and shows a larger dielectric constant of 660 than that of bulk materials. Furthermore, tetragonal Pb(Zr0.3Ti0.7)O-3 film can be formed with controlled a- or c-axis orientation by using Pb(Zr0.7Ti0.3)O-3 buffer layer.
Keywords:PULSED-LASER DEPOSITION;TITANATE THIN-FILMS;EPITAXIAL-GROWTH;FERROELECTRIC MEMORIES;DIELECTRIC-PROPERTIES;EVAPORATION;ABLATION