Journal of Vacuum Science & Technology B, Vol.13, No.3, 974-977, 1995
Fabrication of InGaAs/InP Avalanche Photodiodes by Reactive Ion Etching Using CH4/H-2 Gases
Keywords:BURIED-HETEROSTRUCTURE LASER;CHEMICAL VAPOR-DEPOSITION;GAIN-BANDWIDTH PRODUCT;INP;HYDROGEN;PHOTODETECTORS;PASSIVATION;ACCEPTORS;METHANE