Journal of Vacuum Science & Technology B, Vol.13, No.3, 967-973, 1995
Transmission Electron-Microscopy Study of In0.25Ga0.75As Epilayers Grown on GaAs(001) by Molecular-Beam Epitaxy - The Effect of Epilayer Thickness
Keywords:CRITICAL LAYER THICKNESS;QUANTUM-WELL STRUCTURES;MISFIT DISLOCATIONS;STRAINED LAYERS;HETEROSTRUCTURES;RELAXATION;INGAAS;GAAS;NUCLEATION