Journal of Vacuum Science & Technology A, Vol.13, No.3, 623-628, 1995
Epitaxial-Growth of a Metal(CoSi2) Insulator(CaF2) Nanometer-Thick Heterostructure and Its Application to Quantum-Effect Devices
Keywords:NEGATIVE DIFFERENTIAL RESISTANCE;IONIZED-CLUSTER-BEAM;VACUUM DEPOSITION;CAF2;TEMPERATURE;SI(111);SILICON;SUPERLATTICE;COSI2;SI