Previous Article Next Article Table of Contents Journal of Vacuum Science & Technology A, Vol.13, No.3, 602-606, 1995 DOI10.1116/1.579793 Export Citation Interface Characterization of an InP/InGaAs Resonant-Tunneling Diode by Scanning-Tunneling-Microscopy Wu W, Skala SL, Tucker JR, Lyding JW, Seabaugh A, Beam EA, Jovanovic D Keywords:GROWTH;HETEROJUNCTIONS;GAAS Please enable JavaScript to view the comments powered by Disqus.
