Previous Article Next Article Table of Contents Journal of Vacuum Science & Technology A, Vol.13, No.1, 73-77, 1995 DOI10.1116/1.579446 Export Citation Atomic Layer Molecular-Beam Epitaxy Growth of GaAs1-xPx Layers - Study of P-2 Incorporation by the Reflectance Difference Technique Gonzalez Y, Gonzalez L, Briones F Keywords:GAAS;SPECTROSCOPY Please enable JavaScript to view the comments powered by Disqus.
