Previous Article Next Article Table of Contents Journal of Vacuum Science & Technology A, Vol.12, No.6, 3095-3101, 1994 Export Citation Investigation of Selective SiO2-to-Si Etching in an Inductively-Coupled High-Density Plasma Using Fluorocarbon Gases Bell FH, Joubert O, Oehrlein GS, Zhang Y, Vender D Keywords:SILICON DIOXIDE;MECHANISMS;SI;DEPENDENCE;RESIDUES;CF4-H2;DAMAGE [Referenced By] Please enable JavaScript to view the comments powered by Disqus.
