High-crystalline-quality titanium silicides were formed on n(+)p and p(+)n silicon junctions by sputter depositing alternate layers of Ti and Si in a thickness ratio of Si/Ti approximate to 2.5 andsubsequent annealing at 870 degrees C. Specific contact resistivities to n silicon as low as 2 x 10(-8) Ohm cm(2) were obtained, an order of magnitude lower than those obtained by the conventional single-Ti-layer silicidation process. This is because silicidation by multilayer Ti/Si deposition and annealing does not affect the junction during the process. The silicide/silicon interface is very abrupt. The whole process is less sensitive to the annealing conditions so that a conventional nitrogen (N-2) furnace may be used. The sheet resistivity of the film is similar to 22 mu Ohm cm. A pressure limit of 10(-6) Torr in the chamber was sufficient for this sputtering process.