This paper investigates the fine-line patterning of the vapor deposited polymer parylene-n, as a candidate material for a low dielectric constant interlayer dielectric in multilevel metallization. Etch rates have been determined in plasmas of both pure oxygen and a mixture of O-2/CF4. Half-micron, anisotropic patterns have also been produced and the conditions for obtaining straight-wall profiles have been determined. In addition, inlayed structures of the damascene type have been fabricated. The effects of plasma treatment on the parylene surface are also reported.