화학공학소재연구정보센터
Polymer(Korea), Vol.43, No.3, 420-428, May, 2019
실록산 구조가 도입된 투명 폴리이미드 필름 합성에 관한 연구
A Study on the Synthesis of Transparent Polyimide Film with Siloxane Group
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초록
본 연구에서는 투과도가 향상된 투명 폴리이미드(transparent polyimide; TPI) 필름을 합성하기 위하여 실록산기(Si-O-Si)를 갖는 디아민 단량체인 1,3-bis(3-aminopropyl)tetramethyldisiloxane(BAPTMDS)과 불소기(-CF3)를 갖는 4,4-(hexafluoroisopropylidene)diphthalic anhydride(6FDA) 및 술폰기(-SO2-)를 갖는 4,4-diphenylsulfonetetracarboxylic dianhydride(DSDA) 무수화물 단량체를 공중합시켰다. 이미드 주사슬에서 실록산기를 도입하게 되면 전하이동착체 형성을 억제하여 투과율이 90% 이상을 가지는 TPI를 효과적으로 제조할 수 있었다. 하지만, BAPTMDS의 “M” 타입의 실록산기의 도입으로 열적, 기계적 성질이 감소되어, 이를 개선하기 위하여 bis(3-aminophenyl)sulfone(APS)와 BAPTMDS 디아민 단량체의 몰비를 조절하였다. 제조된 TPI 필름에 그래핀 분산 및 은 나노와이어를 코팅하여 전기 전도 특성을 고찰해보았다. Siloxane based TPI의 그래핀의 분산도가 가장 우수하였으며, 이는 실록산기의 소수성 특성에 기인하였다고 생각된다. 은 나노와이어 박막을 성막한 실록산기 함유 TPI는 우수한 표면저항(~30 Ω/□) 과 광투과도(>85%)를 보여 다양한 전도성 유연 투명기판으로의 활용이 기대된다.
1,3-Bis(3-aminopropyl)tetramethyldisiloxane (BAPTMDS), a diamine monomer having a siloxane group (Si-O-Si), 4,4-(hexafluoroisopropylidene)diphthalic anhydride (6FDA) having a group (-CF3) and/or a 4,4-diphenylsulfonetetracarboxylic dianhydride anhydride (DSDA) monomer having a sulfone group (-SO2-) were copolymerized to prepare a transparent polyimide (TPI) film with improved transparency. When a siloxane group was introduced in the imide main chain, TPI having a high transmittance ( >90%) was effectively achieved by inhibiting formation of a charge transfer complex. However, the thermal and mechanical properties were reduced due to the introduction of the “M” type siloxane group in the BAPTMDS. Thermal and mechanical properties of the TPI were enhanced by controlling the molar ratio of bis(3-aminophenyl)sulfone (APS) and BAPTMDS diamine monomer. The electroconductive properties of TPI films were investigated by graphene dispersion and silver nanowires coating. The graphene dispersity of siloxane based TPI was excellent among the prepared various TPIs, which is thought to be due to the hydrophobic character of the siloxane group. Siloxane containing TPI films coated with silver nanowire thin films are expected to be used as various conductive transparent flexible substrates because of their excellent surface resistance (~30 Ω/□) and light transmittance (>85%).
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