열처리한 CdS 박막의 구조변환에 관한 연구

김근묵; 한은주; Keun Mook Kim; Eun Joo Hahn

Korean Journal of Materials Research, Vol.9, No.8, 782-786, August, 1999

Export Citation

열처리한 CdS 박막의 구조변환에 관한 연구

A Study on the Phase Transition of Heat-Treated CdS Thin Films

김근묵, 한은주

수원대학교 물리학과

Keun Mook Kim, and Eun Joo Hahn

Dept. of Physics, The University of Suwon, Suwon, 445-743, Korea

초록

진공증착법으로 CdS 박막을 제작하여 열처리한 시료를 상온에서 SEM, XRD, EDX와 PL 특성을 측정하여 50 ? C와450 ? C 사이에서 cubic to hexagonal phase transition을 확인하였다. 열처리 결과 S-빈자리에 O 2 와 Si불순물이 보상되어 CdO 또는 Cd 2 SiO 4 주개준위(donor level)를 만드는데 광발광 측정에서 열처리온도 350 ? C 에서는 2.34eV, 550 ? C 는 2.42eV에서 EE 피이크를 나타내었다. 이러한 특성결과 본 연구에서 결정구조변환 온도는 370?C 를 나타내었으며 Ariza-Calderon 등의 CBD박막에 대한 결과인 374 ? C 와 유사한 것으로 확인되었다.

CdS thin films prepared by vaccum evaperation have been studied the characteristcs of room temperature of scanning electron microscoe(SEM), X-ray diffraction(XRD), energy dispersive X-ray(EDX), and photoluminescence(PL)spectra. The cubic to hexagonal structure phase transitin has been determined to be 350 ? C 450 ? C . The results of compensated donor levels of O 2 and Si impurites at S-vacancy were identified CdO and Cd 2 SiO 4 defects. The edge emission peaks measured by PL of room temperature was donor level accoding the theses O 2 and Si impurites were due to 2.43eV( 350 ? C ) and 2.42eV(55 0 ? C ) peak energies respectively. The structure transition annealing temperature was measured 370 ? C similar to Ariza-Calderons result, 374 ? C by CBD films.

[References]

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[1] Morris GC, Das SK, Tanner PG, J. Cryst. Growth, 117, 929 (1992)

[2] Sahu SN, Chandra S, Sol. Cells, 22, 163 (1987)

[3] Santamaria J, Mondal I, Iborra E, Diaz GG, Quseada FS, Sol. Energy Mater., 28, 31 (1990)

[4] Zhao J, Dou K, Chen Y, Jin C, Sun L, Huang S, Yu J, Xiang W, Ding Z, J. Lumminescence, 66-67, 332 (1996)

[5] Wu CH, Bube RH, J. Appl. Phys., 45, 648 (1974)

[6] Zelaya-Angel O, Alvarado-Gel JJ, Lozada-Morales R, Vargas H, Ferreira da Silva A, Appl. Phys. Lett., 64, 291 (1994)

[7] Britt J, Ferekides C, Appl. Phys. Lett., 62, 2851 (1992)

[8] Cardona M, Weinstein M, Wolff GA, Phys. Rev., A140, 633 (1965)

[9] Ariza-Calderon H, Lozada-Morales R, Zelay-Angel O, Mendoza-Alvarer JG, Banos L, J. Vac. Sci. Technol., A14, 2480 (1996)

[10] Kroger FA, Physica., 7, 1 (1940)

[11] Pedrotti LS, Raynolds DC, Phys. Rev., 120, 1664 (1960)

[12] Park TS, Chin GW, Kim YH, Hahn EJ, Kim KM, Korean J. Mater. Res., 7, 981 (1997)

[13] George PJ, Sanchez A, Nair PK, Hung L, J. Crist. Growth, 158, 53 (1996)

[14] Yamaguchi; M, Yamamoto A, Kondo M, J. Appl. Phys., 48, 196 (1977)

[15] Zelaya-Angel O, Esparza-Garcia AE, Falcony C, Lozada-Morales R, Ramirez-Bon R, Solid-State Comm., 94, 81 (1995)