절연층인 CeO 2 2  박막의 제조 및 Pt/ SrBi2SrBi 2  Ta2Ta 2  O9O 9  / $CeO_24 /Si MFISFET 구조의 전기적 특성

박상식; Sang-Shik, Park

Korean Journal of Materials Research, Vol.10, No.12, 807-811, December, 2000

Export Citation

절연층인 CeO 2 2 박막의 제조 및 Pt/ SrBi2SrBi 2 Ta2Ta 2 O9O 9 / $CeO_24 /Si MFISFET 구조의 전기적 특성

Preparation of CeO2 Thin Films as an Insulation Layer and Electrical Properties of Pt/ SrBi2Ta2O9/CeO_24 /Si MFISFET

박상식

상주대학교 신소재공학과

Sang-Shik, Park

Dept. of Advanced Materials Engineering, Sangju Mational University, Korea

초록

MFISFET (Metal-ferroelectric-nsulator-semiconductor-field effect transistor)에의 적용을 위해 CeO 2 와 SrBi 2 Ta 2 O 9 박막을 각각 r.f. sputtering 및 pulsed laser ablation법으로 제조하였다. CeO 2 박막은 증착시 스퍼터링개스비 (Ar:O 2 )에 따른 특성을 고찰하였다. Si(100) 기판 위에 700 ? C 에서 증착된 CeO 2 박막들은 (200)방향으로 우선방향성을 가지고 성장하였고 O 2 개스량이 증가함에 따라 박막의 우선방향성, 결정립도 및 표면거칠기는 감소하였다. C-V특성에서는 Ar:O 2 가 1 : 1인 조건에서 제조된 박막이 가장 양호한 특성을 보였다. 제조된 박막들의 누설전류값은 100kV/cm의 전계에서 10 ?7 ~ 10 ?8 A의 차수를 보였다. CeO 2 /Si 기판위에 성장된 SBT는 다결정질상의 치밀한 구조를 가지고 성장을 하였다 80 0 ? C 에서 열처리된 SBT박막으로 구성된 MFIS구조의 C-V 특성에서 memory window 폭은 0.9V를 보였으며 5V에서 4 × 10 ?7 A/ cm 2 의 누설전류밀도를 보였다.

CeO 2 and SrBi 2 Ta 2 O 9 (SBT) thin films for MFISFET (Metal-ferroelectric-insulator-semiconductor-field effect transistor) were deposited by r.f. sputtering and pulsed laser ablation method, respectively. The effects of sputtering gas ratio(Ar:O 2 ) during deposition for CeO 2 films were investigated. The CeO 2 thin films deposited on Si(100) substrate at 600 ? C exhibited (200) preferred orientation. The preferred orientation, Brain size and surface roughness of films decreased with increasing oxygen to argon gas ratio. The films deposited under the condition of Ar:O 2 = 1 1 : 1 showed the best C- V characteristics. The leakage current of films showed the order of 10 ?7 ~10 ?8 A at 100kV/cm. The SBT thin films on CeO 2 /Si substrate showed dense microstructure of polycrystalline phase. From the C-V characteristics of MFIS structure with SBT film annealed at 80 0 ? C , the memory window width was 0.9V at 5V The leakage current density of Pt/SBT/CeO 2 /Si structure annealed at 80 0 ? C was 4 × 10 ?7 / cm 2 at 5V.

Keywords:MFISFET(Metal-ferroelectric-insulator-semiconductor-field effect transistor);Ferroelectric;PLD(Pulsed Laser Deposition);Sputtering

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[1] Kim S, Hishita S, Kang Y, Baik S, J. Appl. Phys., 78, 2801 (1995)

[2] Lim MH, Kalkur TS, Integ. Ferroelect., 17, 433 (1997)

[3] Wu YM, Lo JT, Jpn. J. Appl. Phys., 37, 4943 (1998)

[4] Coleman WJ, Appl. Opt., 13, 946 (1974)

[5] Millot F, Mierry RD, J. Phys. Chem. Solids, 46, 797 (1985)

[6] Al-Robaee MS, Shivalingappa L, Rao KN, Mohan S, Thin Solid Films, 221, 214 (1992)

[7] Cole BF, Liang GC, Newman N, Char K, Zacharchuk G, Martens J, Appl. Phys. Lett., 61, 1727 (1992)

[8] Luo L, Wu XD, Dye RC, Appl. Phys. Lett., 59, 2043 (1991)

[9] Inoue T, Yamamoto Y, Koyama S, Suzuki S, Ueda Y, Appl. Phys. Lett., 56, 1332 (1990)

[10] Yoshimoto M, Nagata H, Tsukahara T, Koinuma H, Jpn. J. Appl. Phys., 29, L1199 (1990)

[11] Fukuda H, Miura M, Sakuma S, Nomura S, Jpn. J. Appl. Phys., 37, 4158 (1998)

[12] Kim LJ, Kim JM, Jung DG, Park CY, Yang CW, Roh YH, Thin Solid Films, 360(1-2), 154 (2000)

[13] Kang JF, Xiong GC, Lian GJ, Wang YY, Han RQ, Solid State Commun., 108, 225 (1998)

[14] Kim YT, Shin DS, Park YK, Choi IH, J. Appl. Phys., 86, 3387 (1999)