Korean Journal of Materials Research, Vol.12, No.7, 522-527, July, 2002
GaN/사파이어 구조에서의 표면탄성파 전단특성
SAW Propagation Properties of GaN/Sapphire Structure
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To investigate the SAW properties of GaN films on c-plane sapphire substrates, we carried out both the experimental measuring and theoretical calculation. The experimental characterization of SAW propagation properties was performed with a linear array of interdigital transducer (IDT) structures, while SAW velocities were calculated by matrix methods. HVPSAW mode with the propagation velocity over 10,000m/s and PSAW mode as well as GSAW could be observed in experimental determination. These results were verified by matching with the theoretical calculation.
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