Cu/Ti-cappng/NiSi 전극구조 p +/n 접합의 전기적 특성

이근우; 김주연; 배규식; Keun-Yoo Lee; Ju-Youn Kim; Kyoo-Sik Bae

Korean Journal of Materials Research, Vol.15, No.5, 318-322, May, 2005

DOI10.3740/MRSK.2005.15.5.318 Export Citation

Cu/Ti-cappng/NiSi 전극구조 p +/n 접합의 전기적 특성

Electrical Characteristics of p +/n Junctions with Cu/Ti-capping/NiSi Electrode

이근우, 김주연¹, 배규식^†

수원대학교 전자재료공학과
¹한양대학교 재료공학부

Keun-Yoo Lee, Ju-Youn Kim¹, and Kyoo-Sik Bae^†

Department of Electronic Materials Engineering, The University of Suwon, Suwon, 445-743, Korea
¹Division of Materials Science and Engineering, Hanyang University, Seoul, 100-791, Korea

E-mail:

Ti-capped NiSi contacts were formed on [Math Processing Error] junctions to improve the leakage problem and then Cu was deposited without removing the Ti-capping layer in an attempt to utilize as a diffusion barrier. The electrical characteristics of these [Math Processing Error] diodes with Cu/Ti/NiSi electrodes were measured as a function of drive-in RTA(rapid-thermal annealing) and silicidation temperature and time. When drive-in annealed at [Math Processing Error] , 10 sec. and silicided at [Math Processing Error] , 100 sec., the diodes showed the most excellent I-V characteristics. Especially, the leakage current was [Math Processing Error] , much lower than reported data for diodes with NiSi contacts. However, when the [Math Processing Error] diodes with Cu/Ti/NiSi contacts were furnace-annealed at [Math Processing Error] for 40 min., the leakage current increased by 4 orders. The FESEM and AES analysis revealed that the Ti-capping layer effectively prohibited the Cu diffusion, but was ineffective against the NiSi dissociation and consequent Ni diffusion.

Keywords:Ti-capped NiSi contact;I-V characteristics;thermal stability;Cu diffusion barrier

[References]

Iwai H, Ohguro T, Ohmi SI, Microelectronic Engineering, 60, 157 (2002)
Lauwers A, Kittle JA, Van Dal MJH, Chamirian O, Pawlak MA, De Potter M, Lindsay R, Raymakes T, Pages X, Mebarki B, Mandrekar T, Maex K, Materials Science and Engineering B, 114-115, 29 (2004)
Lavoie C, D'Heurle FM, Detavernier C, Cabral Jr C, Microelectronic Engineering, 20, 144 (2003)
Kwak WK, Cho BR, Yoon SY, Park SJ, Jang J, IEEE-EDL, 21(3), 107 (2000)
Kim YS, Kim MS, Joo SK, Kor J. Mater. Res., 14(7), 477 (2004)
Yang TH, Luo G, Chang EY, Yang TY, Tseng HC, Chang CY, IEEE-EDL, 24(9), 544 (2003)
Toledo NG, Lee PS, Pey KL, Thin Solid Films, 462-463, 202 (2004)
Park SJ, Lee KW, Kim JY, Jun HT, Bae KS, Kor J. Mater. Res., 13(7), 460 (2003)
Wang SQ, MRS Bulletin, 30 (1994)
Shacham-Diamond Y, J. Electron. Mater., 30(4), 336 (2001)
Hong SJ, Lee JG, Kor J. Mater. Res., 12(11), 889 (2002)
Byun JS, Kim DH, Kim WS, Kim HJ, J. Appl. Phys., 78(3), 1725 (1995)
Probst V, Schaber H, Mitwalsky A, Kabza H, Den Hove LV, Maex K, J. Appl. Phys., 70(2), 708 (1991)

[Referenced By]

[1] Iwai H, Ohguro T, Ohmi SI, Microelectronic Engineering, 60, 157 (2002)

[2] Lauwers A, Kittle JA, Van Dal MJH, Chamirian O, Pawlak MA, De Potter M, Lindsay R, Raymakes T, Pages X, Mebarki B, Mandrekar T, Maex K, Materials Science and Engineering B, 114-115, 29 (2004)

[3] Lavoie C, D'Heurle FM, Detavernier C, Cabral Jr C, Microelectronic Engineering, 20, 144 (2003)

[4] Kwak WK, Cho BR, Yoon SY, Park SJ, Jang J, IEEE-EDL, 21(3), 107 (2000)

[5] Kim YS, Kim MS, Joo SK, Kor J. Mater. Res., 14(7), 477 (2004)

[6] Yang TH, Luo G, Chang EY, Yang TY, Tseng HC, Chang CY, IEEE-EDL, 24(9), 544 (2003)

[7] Toledo NG, Lee PS, Pey KL, Thin Solid Films, 462-463, 202 (2004)

[8] Park SJ, Lee KW, Kim JY, Jun HT, Bae KS, Kor J. Mater. Res., 13(7), 460 (2003)

[9] Wang SQ, MRS Bulletin, 30 (1994)

[10] Shacham-Diamond Y, J. Electron. Mater., 30(4), 336 (2001)

[11] Hong SJ, Lee JG, Kor J. Mater. Res., 12(11), 889 (2002)

[12] Byun JS, Kim DH, Kim WS, Kim HJ, J. Appl. Phys., 78(3), 1725 (1995)

[13] Probst V, Schaber H, Mitwalsky A, Kabza H, Den Hove LV, Maex K, J. Appl. Phys., 70(2), 708 (1991)