질소 도핑된 P/P - Epitaxial Silicon Wafer의 Slip 및 강도 평가

최은석; 배소익; Eun-Suck Choi; So-Ik Bae

Korean Journal of Materials Research, Vol.15, No.5, 313-317, May, 2005

DOI10.3740/MRSK.2005.15.5.313 Export Citation

질소 도핑된 P/P - Epitaxial Silicon Wafer의 Slip 및 강도 평가

Evaluation of Slip and Strength of Nitrogen doped P/P - Epitaxial Silicon Wafers

최은석^†, 배소익

LG Siltron 기술연구소 Leading (1) Project Team

Eun-Suck Choi^†, and So-Ik Bae

Leading (1) Project Team, R&D Center, LG Siltron, 283, Imsoo-dong, Gumi, Gyeong-Buk, 730-724, Korea

E-mail:

The relation between bulk microdefect (BMD) and mechanical strength of [Math Processing Error] epitaxial silicon wafers (Epitaxial wafer) as a function of nitrogen concentrations was studied. After 2 step anneal [Math Processing Error] , BMD was not observed in nitrogen undoped epitaxial silicon wafer while BMD existed and increased up to [Math Processing Error] by addition of [Math Processing Error] nitrogen doping. The slip occurred for nitrogen undoped and low level nitrogen doped epitaxial wafers. However, there was no slip occurrence above [Math Processing Error] nitrogen doped epitaxial wafer. Mechanical strength was improved from 40 to 57 MPa as nitrogen concentrations were increased. Therefore, the nitrogen doping in silicon wafer plays an important role to improve BMD density, slip occurrence and mechanical strength of the epitaxial silicon wafers.

Keywords:mechanical strength;slip;BMD;Nitrogen doping

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[1] Nakai K, Kitahara K, Ohta Y, Ikari A, Tanaka M, Jpn. J. Appl. Phys., 43(4A), 1241 (2004)

[2] Nakai K, Kitahara K, Ohta Y, Ikari A, Tanaka M, Jpn. J. Appl. Phys., 43(4A), 1247 (2004)

[3] Takahashi J, Nakai K, Kawakami K, Inoue Y, Yokota H, Tachikawa A, Ikari A, Ohashi W, Jpn. J. Appl. Phys., 42(2A), 363 (2003)

[4] Orlova V, Richterc H, Fischerc A, Reif J, Muller T, Wahlich R, Materials Science in Semicon. Proc., 5, 403 (2003)

[5] Fukuda T, Ohsawa A, Appl. Phys. Lett., 58(23), 2634 (1991)

[6] Wang G, Yang D, Li D, Shui Q, Yang J, Que D, Physica B, 308-310, 450 (2001)

[7] Li D, Yang D, Que D, Physica B, 273-274, 553 (1999)

[8] Shimura F, Hockett RS, Appl. Phys. Lett, 48(3), 224 (1986)

[9] Shimizu H, Watanabe T, Kakui Y, Jpn. J. Appl. Phys., 24(7), 815 (1985)

[10] Shimizu H, Aoshima T, Jpn. J. Appl. Phys., 27(12), 2315 (1998)

[11] Wereszczak AA, Barnes AS, Breder K, J. Mat. Sci. : Materials in Electronics, 11, 291 (2000)

[12] Takasu S, 19th Workshop on ULSI Ultra Clean Technology, p.111 (1992) (1992)

[13] Shimura F, Semiconductor Silicon Crystal Technology, p.77, Academic Press. Inc. (1989) (1989)

[14] Shimura F, Oxygen in Silicon, p.449, Academic Press Inc. (1994) (1994)