ZrO2 첨가에 따른 AC PDP 보호막용 MgO 박막의 광학적 전기적 특성

김창일; 정영훈; 이영진; 백종후; 최은하; 정석; 김정석; Chang-Il Kim; Young-Hun Jung; Young-Jin Lee; Jong-Hoo Paik; Eun-Ha Choi; Seok Jung; Jeong-Seok Kim

Korean Journal of Materials Research, Vol.18, No.8, 422-426, August, 2008

DOI10.3740/MRSK.2008.18.8.422 Export Citation

ZrO2 첨가에 따른 AC PDP 보호막용 MgO 박막의 광학적 전기적 특성

Effects of ZrO2 Addition on Optical and Electrical Properties of MgO Films as a Protective Layer for AC PDPs

김창일, 정영훈, 이영진, 백종후^†, 최은하¹, 정석², 김정석²

요업(세라믹)기술연구원
¹광운대학교 전자물리학과
²(주)씨앤켐 기술연구소

Chang-Il Kim, Young-Hun Jung, Young-Jin Lee, Jong-Hoo Paik^†, Eun-Ha Choi¹, Seok Jung², and Jeong-Seok Kim²

Electronic Components & Materials Division, Korea Institute of Ceramic Engineering and Technology, Seoul 153-801, Korea
¹Department of Electrophysics, Kwangwoon University, Seoul 139-701, Korea
²R&D Department, Ceramics & Chemicals Technology Inc., Ulsan 689-892, Korea

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The effects of an addition of ZrO2 on the microstructure and electrical properties of MgO films as a protective layer for AC plasma display panels were investigated. MgO + a 200 ppm ZrO2 protective layer prepared by e-beam evaporation exhibited a secondary electron emission coefficient (γ) that was improved by 21% compared to that of a pure MgO protective layer. The relative density and Vickers hardness increased with a further addition of ZrO2. These results suggest that the discharge properties and optical properties of MgO protective layers are closely related to the relative density and Vickers hardness. The good optical and electrical properties of γ, at 0.080, a grain size of 19 μm and an optical transmittance of 91.93 % were obtained for the MgO + 200 ppm ZrO2 protective layer sintered at 1700oC for 5 hrs.

Keywords:PDP;protective layer;MgO;doping

[References]

Rho BG, LCD Engineering, pp.333-344, Sungandang, (in Korea) (2000). (2000)
Kim HJ, Kim SK, Kor. IEEME, 13(8), 1226 (2000)
Urade T, Iemori T, Oswa M, Nakayama N, IEEE Trans. Electron Devices, 23(3), 313 (1976)
Aboelfotoh MO, Lorenzen JA, J. Appl. Phys., 48, 4754 (1977)
Kim CI, Lim EK, Park YJ, Lee YJ, Paik JH, Choi EH, Jung S, Kim JS, Kor. IEEME, 20(7), 620 (2007)
Cho JH, Kim RW, Kim JY, Lee YK, Kim HJ, Park JW, Korean J. Mater. Res., 9(5), 441 (1999)
Wintersgill M, Fomtanella J, J. Appl. Phys., 50, 8259 (1979)
Yoon CK, Kim JK, Chung YW, Ahn SH, Yang JH, Whang KW, J. Soc. Info. Display, 611 (1997)
Machida K, Uchiike H, Sasaki H, J. Soc. Info. Display, 531 (1992)
Uchiike H, Harada S, J. Soc. Info. Display, 444 (1991)
Kamata K, Shibata Y, Kishi T, J. Mater. Sci. Lett., 3, 423 (1984)
Vink TJ, Balkenende AR, Verbeek RGFA, Van Hal HAM, De Zwart ST, Appl. Phys. Lett., 80, 2216 (2002)
Choi EH, Oh HJ, Kim YG, Ko JJ, Lim JY, Kim JG, Kim DI, Cho G, Kang SO, Jpn. J. Appl. Phys., 37, 7015 (1998)
Choi EH, Lim JY, Kim YG, Ko JJ, Kim DI, Lee CW, Cho GS, J. Appl. Phys., 86, 6525 (1999)
Kim DI, Lim JY, Kim YG, Ko JJ, Lee CW, Cho GS, Choi EH, Jpn. J. Appl. Phys., 39, 1890 (2000)

[Referenced By]

[1] Rho BG, LCD Engineering, pp.333-344, Sungandang, (in Korea) (2000). (2000)

[2] Kim HJ, Kim SK, Kor. IEEME, 13(8), 1226 (2000)

[3] Urade T, Iemori T, Oswa M, Nakayama N, IEEE Trans. Electron Devices, 23(3), 313 (1976)

[4] Aboelfotoh MO, Lorenzen JA, J. Appl. Phys., 48, 4754 (1977)

[5] Kim CI, Lim EK, Park YJ, Lee YJ, Paik JH, Choi EH, Jung S, Kim JS, Kor. IEEME, 20(7), 620 (2007)

[6] Cho JH, Kim RW, Kim JY, Lee YK, Kim HJ, Park JW, Korean J. Mater. Res., 9(5), 441 (1999)

[7] Wintersgill M, Fomtanella J, J. Appl. Phys., 50, 8259 (1979)

[8] Yoon CK, Kim JK, Chung YW, Ahn SH, Yang JH, Whang KW, J. Soc. Info. Display, 611 (1997)

[9] Machida K, Uchiike H, Sasaki H, J. Soc. Info. Display, 531 (1992)

[10] Uchiike H, Harada S, J. Soc. Info. Display, 444 (1991)

[11] Kamata K, Shibata Y, Kishi T, J. Mater. Sci. Lett., 3, 423 (1984)

[12] Vink TJ, Balkenende AR, Verbeek RGFA, Van Hal HAM, De Zwart ST, Appl. Phys. Lett., 80, 2216 (2002)

[13] Choi EH, Oh HJ, Kim YG, Ko JJ, Lim JY, Kim JG, Kim DI, Cho G, Kang SO, Jpn. J. Appl. Phys., 37, 7015 (1998)

[14] Choi EH, Lim JY, Kim YG, Ko JJ, Kim DI, Lee CW, Cho GS, J. Appl. Phys., 86, 6525 (1999)

[15] Kim DI, Lim JY, Kim YG, Ko JJ, Lee CW, Cho GS, Choi EH, Jpn. J. Appl. Phys., 39, 1890 (2000)