RF 마그네트론 스퍼터로 증착된 In2O3 박막의 질소분위기 열처리에 따른 특성변화

공영민; 이영진; 허성보; 이학민; 서민수; 김유성; 김대일; Young-Min Kong; Young-Jin Lee; Sung-Bo Heo; Hak Min Lee; Min-su Seo; Yu-Sung Kim; Daeil Kim

Korean Journal of Materials Research, Vol.22, No.1, 24-28, January, 2012

DOI10.3740/MRSK.2012.22.1.024 Export Citation

RF 마그네트론 스퍼터로 증착된 In2O3 박막의 질소분위기 열처리에 따른 특성변화

Effect of Annealing in a Nitrogen Atmosphere on the Properties of In2O3 Films Deposited with RF Magnetron Sputtering

공영민, 이영진, 허성보, 이학민, 서민수, 김유성¹, 김대일^†

울산대학교 첨단소재공학부
¹뉴옵틱스 기술연구소

Young-Min Kong, Young-Jin Lee, Sung-Bo Heo, Hak Min Lee, Min-su Seo, Yu-Sung Kim¹, and Daeil Kim^†

School of Materials Science and Engineering, University of Ulsan, 680-749, Korea
¹R&D Division, New Optics LTD., Miryang 627-803, Korea

E-mail:

In2O3 films were deposited by RF magnetron sputtering on a glass substrate and then the effect of post deposition annealing in nitrogen atmosphere on the structural, optical and electrical properties of the films was investigated. After deposition, the annealing process was conducted for 30 minutes at 200 and 400oC. XRD pattern analysis showed that the as deposited films were amorphous. When the annealing temperature reached 200-400oC, the intensities of the In2O3 (222) major peak increased and the full width at half maximum (FWHM) of the In2O3 (222) peak decreased due to the crystallization. The films annealed at 400oC showed a grain size of 28 nm, which was larger than that of the as deposited amorphous films. The optical transmittance in the visible wavelength region also increased, while the electrical sheet resistance decreased. In this study, the films annealed at 400oC showed the highest optical transmittance of 76% and also showed the lowest sheet resistance of 89 Ω/□. The figure of merit reached a maximum of 7.2 × 10.4 Ω.1 for the films annealed at 400oC. The effect of the annealing on the work-function of In2O3 films was considered. The work-function obtained from annealed films at 400oC was 7.0eV. Thus, the annealed In2O3 films are an alternative to ITO films for use as transparent anodes in OLEDs.

Keywords:In2O3;magnetron sputtering;nitrogen atmosphere;annealing;figure of merit

[References]

Heo SB, Lee HM, Jung CW, Kim SK, Lee YJ, Kim SK, You YZ, Kim D, J. Kor. Soc. Heat Treatment, 24, 31 (2011)
Kwak JH, Cho SH, J. Kor. Vacuum Soc., 19, 224 (2010)
Son CS, Korean J. Mater. Res., 21(3), 144 (2011)
Adurodija FO, Semple L, Bruning R, Thin Solid Films, 492(1-2), 153 (2005)
Korobov V, Leibovitch M, Shapira Y, Appl. Phys. Lett., 65, 2290 (1994)
Senthilkumar V, Vickraman P, Curr. Appl. Phys., 10(3), 880 (2010)
Morikawa H, Fujita M, Thin Solid Films, 359(1), 61 (2000)
Lee JH, J. KIEEME., 19(2), 109 (2006)
Cullity BD, Stock SR, Elements of X-ray Diffraction, 1st ed., p. 102-121, Addition-Wesley, Reading, MA (1978). (1978)
Kim D, J. KIEEME., 24(9), 739 (2011)
Haacke G, J. Appl. Phys., 47, 4086 (1976)
Kim D, Appl. Surf. Sci., 257(3), 704 (2010)
Kim D, Displays, 31, 155 (2010)

[Referenced By]

[1] Heo SB, Lee HM, Jung CW, Kim SK, Lee YJ, Kim SK, You YZ, Kim D, J. Kor. Soc. Heat Treatment, 24, 31 (2011)

[2] Kwak JH, Cho SH, J. Kor. Vacuum Soc., 19, 224 (2010)

[3] Son CS, Korean J. Mater. Res., 21(3), 144 (2011)

[4] Adurodija FO, Semple L, Bruning R, Thin Solid Films, 492(1-2), 153 (2005)

[5] Korobov V, Leibovitch M, Shapira Y, Appl. Phys. Lett., 65, 2290 (1994)

[6] Senthilkumar V, Vickraman P, Curr. Appl. Phys., 10(3), 880 (2010)

[7] Morikawa H, Fujita M, Thin Solid Films, 359(1), 61 (2000)

[8] Lee JH, J. KIEEME., 19(2), 109 (2006)

[9] Cullity BD, Stock SR, Elements of X-ray Diffraction, 1st ed., p. 102-121, Addition-Wesley, Reading, MA (1978). (1978)

[10] Kim D, J. KIEEME., 24(9), 739 (2011)

[11] Haacke G, J. Appl. Phys., 47, 4086 (1976)

[12] Kim D, Appl. Surf. Sci., 257(3), 704 (2010)

[13] Kim D, Displays, 31, 155 (2010)