The relation of the progress of crystallization in indium-oxide thin films to the change of electrical properties was studied and compared with the results on indium-tin-oxide thin films. The resistivity of amorphous indium-oxide thin films was lower than that of indium-tin-oxide thin films, and increased with the progress of the crystallization contrary to the case of indium-tin-oxide thin films. The resistivity change on annealing of the amorphous film was almost the same between annealing in vacuum and in air. By comparison of the carrier concentration in indium-oxide thin films with that in indium-tin-oxide films, the contribution of ionized Sn to the carrier concentration has been estimated.