단결정 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 의 상전이에 미치는 전장의 영향

이은구; Eun-Gu Lee

Korean Journal of Materials Research, Vol.23, No.6, 329-333, June, 2013

DOI10.3740/MRSK.2013.23.6.329 Export Citation

단결정 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 의 상전이에 미치는 전장의 영향

Effect of Electrical Field on the Phase Transformation of 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 Single Crystals

이은구^†

조선대학교 신소재공학과

Eun-Gu Lee^†

Department of Advanced Materials Engineering, Chosun University, Gwangju 501-759, Korea

E-mail:

The structural phase transformations of 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-0.3PT) were studied using high resolution x-ray diffraction (HRXRD) as a function of temperature and electric field. A phase transformational sequence of cubic (C)→tetragonal (T)→rhombohedral (R) phase was observed in zero-field-cooled conditions; and a C→T→monoclinic (MC)→ monoclinic (MA) phase was observed in the field-cooled conditions. The transformation of T to MA phase was realized through an intermediate MC phase. The results also represent conclusive and direct evidence of a MC to MA phase transformation in field-cooled conditions. Beginning from the zero-field-cooled condition, a R→MA→MC→T phase transformational sequence was found with an increasing electric field at a fixed temperature. Upon removal of the field, the MA phase was stable at room temperature. With increasing the field, the transformation temperature from T to MC and from MC to MA phase decreased, and the phase stability ranges of both T and MC phases increased. Upon removal of the field, the phase transformation from R to MA phase was irreversible, but from MA to MC was reversible, which means that MA is the dominant phase under the electric field. In the M phase region, the results confirmed that lattice parameters and tilt angles were weakly temperature dependent over the range of investigated temperatures.

Keywords:ferroelectric;phase transformations;monoclinic;domain

[References]

Park SE, Shrout T, J. Appl. Phys., 82, 1804 (1997)
Guo R, Cross LE, Park SE, Noheda B, Cox DE, Shirane G, Phys. Rev. Lett., 84, 5423 (2000)
Cox DE, Noheda B, Shirane G, Uesu Y, Fujishiro K, Yamada Y, Appl. Phys. Lett., 79, 400 (2001)
Noheda B, Cox DE, Shirane G, Park SE, Cross LE, Zhong Z, Phy. Rev. Lett., 86, 3891 (2001)
Park S, Shrout TR, IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Contr., 44, 1140 (1997)
Ohwada K, Hirota K, Rehrig P, Fujii Y, Shirane G, Phys. Rev. B, 67, 094111 (2003)
Noheda B, Cox DE, Shirane, Gao J, Ye Z, Phys. Rev. B, 66, 054104 (2002)
Ye Z, Noheda B, Dong M, Cox D, Shirane G, Phys. Rev. B, 64, 184114 (2001)
Orauttapong DL, Noheda B, Ye ZG, Gehring PM, Toulouse J, Cox DE, Shirane G, Phys. Rev. B, 65, 144101 (2002)
Feng Z, Zhao XY, Luo HS, Mater. Res. Bull., 41(6), 1133 (2006)
Sulc M, Tryzna J, Pokorny M, J. Electroceram., 19, 443 (2007)
Chen Y, Lam KH, Zhou D, Gao XS, Dai JY, Luo HS, Chan HLW, J. Appl. Phys., 109, 014111 (2011)
Singh AK, Pandey D, Ferroelectrics, 326, 91 (2005)
Lee EG, Lee J, Korean J. Mater. Res., 22(7), 342 (2012)
Xu Z, Tan X, Han P, Shang J, Appl. Phys. Lett., 76, 3732 (2000)
Singh AK, Pandey D, Phys. Rev. B, 67, 064102 (2003)
Cao H, Bai F, Wang N, Li J, D. Viehland, Xu G, Shirane G, Phys. Rev. B, 72, 064104 (2005)
Yao J, Cao H, Ge W, Li J, Viehland D, Appl. Phys. Lett., 95, 052905 (2009)

[1] Park SE, Shrout T, J. Appl. Phys., 82, 1804 (1997)

[2] Guo R, Cross LE, Park SE, Noheda B, Cox DE, Shirane G, Phys. Rev. Lett., 84, 5423 (2000)

[3] Cox DE, Noheda B, Shirane G, Uesu Y, Fujishiro K, Yamada Y, Appl. Phys. Lett., 79, 400 (2001)

[4] Noheda B, Cox DE, Shirane G, Park SE, Cross LE, Zhong Z, Phy. Rev. Lett., 86, 3891 (2001)

[5] Park S, Shrout TR, IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Contr., 44, 1140 (1997)

[6] Ohwada K, Hirota K, Rehrig P, Fujii Y, Shirane G, Phys. Rev. B, 67, 094111 (2003)

[7] Noheda B, Cox DE, Shirane, Gao J, Ye Z, Phys. Rev. B, 66, 054104 (2002)

[8] Ye Z, Noheda B, Dong M, Cox D, Shirane G, Phys. Rev. B, 64, 184114 (2001)

[9] Orauttapong DL, Noheda B, Ye ZG, Gehring PM, Toulouse J, Cox DE, Shirane G, Phys. Rev. B, 65, 144101 (2002)

[10] Feng Z, Zhao XY, Luo HS, Mater. Res. Bull., 41(6), 1133 (2006)

[11] Sulc M, Tryzna J, Pokorny M, J. Electroceram., 19, 443 (2007)

[12] Chen Y, Lam KH, Zhou D, Gao XS, Dai JY, Luo HS, Chan HLW, J. Appl. Phys., 109, 014111 (2011)

[13] Singh AK, Pandey D, Ferroelectrics, 326, 91 (2005)

[14] Lee EG, Lee J, Korean J. Mater. Res., 22(7), 342 (2012)

[15] Xu Z, Tan X, Han P, Shang J, Appl. Phys. Lett., 76, 3732 (2000)

[16] Singh AK, Pandey D, Phys. Rev. B, 67, 064102 (2003)

[17] Cao H, Bai F, Wang N, Li J, D. Viehland, Xu G, Shirane G, Phys. Rev. B, 72, 064104 (2005)

[18] Yao J, Cao H, Ge W, Li J, Viehland D, Appl. Phys. Lett., 95, 052905 (2009)