Epitaxial SrTiO3 (STO) layers were grown on GaAs (001) substrates by molecular beam epitaxy. A Ti-based surface passivation was used prior to STO growth. The different steps of this passivation procedure are discussed on the basis of reflection high energy electron diffraction experiments. We also show that the STO/GaAs template presents an excellent structural quality with a flat surface, an abrupt semiconductor/oxide interface, and a good crystallinity. Such STO/GaAs templates open perspectives for the integration of perovskite oxides on semiconductor substrates. (C) 2014 Elsevier B.V. All rights reserved.