화학공학소재연구정보센터
Thin Solid Films, Vol.563, 6-9, 2014
Ti-Al-O nanocrystal charge trapping memory cells fabricated by atomic layer deposition
Charge trapping memory cells using Ti-Al-O (TAO) film as charge trapping layer and amorphous Al2O3 as the tunneling and blocking layers were fabricated on Si substrates by atomic layer deposition method. As deposited TAO films were annealed at 700 degrees C, 800 degrees C and 900 degrees C for 3 min in N-2 with a rapid thermal annealing process to form nanocrystals. High-resolution transmission electron microscopy and X-ray photoelectron spectroscopy were used to characterize the microstructure and band diagram of the heterostructures. The electrical characteristics and charge storage properties of the Al2O3/TAO/Al2O3/Si stack structures were also evaluated. Compared to 700 degrees C and 900 degrees C samples, the memory cells annealed at 800 degrees C exhibit better memory performance with larger memory window of 4.8 V at +/- 6V sweeping, higher program/erase speed and excellent endurance. (C) 2014 Elsevier B.V. All rights reserved.